STF26NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

Not Applicable

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

22 ns

Rds On (Max) @ Id, Vgs :

175m Ω @ 10.5A, 10V

Pulsed Drain Current-Max (IDM) :

84A

Length :

10.4mm

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

16.4mm

Series :

FDmesh™ II

Gate Charge (Qg) (Max) @ Vgs :

54.6nC @ 10V

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Power Dissipation-Max :

35W Tc

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1817pF @ 100V

JEDEC-95 Code :

TO-220AB

Case Connection :

Isolated

Weight :

329.988449mg

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

25V

Rise Time :

14.5ns

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

600V

Element Configuration :

Single

Packaging :

Tube

FET Type :

N-Channel

Number of Elements :

1

Mounting Type :

Through Hole

Fall Time (Typ) :

27.5 ns

Base Part Number :

STF26

Continuous Drain Current (ID) :

21A

Vgs (Max) :

±25V

Number of Channels :

1

Turn-Off Delay Time :

69 ns

Width :

4.6mm

Drive Voltage (Max Rds On,Min Rds On) :

10V