STF26NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

20A

DS Breakdown Voltage-Min :

600V

Operating Temperature :

150°C TJ

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

165m Ω @ 10A, 10V

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

50 ns

Series :

MDmesh™ II

Pin Count :

3

Number of Elements :

1

Height :

16.4mm

Power Dissipation-Max :

35W Tc

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

600V

Continuous Drain Current (ID) :

10A

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Length :

10.4mm

Pulsed Drain Current-Max (IDM) :

80A

Vgs (Max) :

±30V

FET Type :

N-Channel

Lead Free :

Lead Free

Number of Terminations :

3

Element Configuration :

Single

Base Part Number :

STF26

Turn-Off Delay Time :

85 ns

Nominal Vgs :

3 V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Radiation Hardening :

No

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

25ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Terminal Finish :

Matte Tin (Sn) - annealed

ECCN Code :

EAR99

Power Dissipation :

30W

Turn On Delay Time :

13 ns

Package / Case :

TO-220-3 Full Pack

Width :

4.6mm

JESD-609 Code :

e3

Case Connection :

Isolated

Packaging :

Tube