STF21NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±25V

Packaging :

Tube

Operating Temperature :

150°C TJ

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

17A

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

68A

Base Part Number :

STF21

Voltage - Rated DC :

600V

Pin Count :

3

Power Dissipation :

30W

Current Rating :

17A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

31 ns

Rds On (Max) @ Id, Vgs :

220m Ω @ 8.5A, 10V

Element Configuration :

Single

Rise Time :

15ns

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Power Dissipation-Max :

30W Tc

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

MDmesh™

Case Connection :

Isolated

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 50V

Mounting Type :

Through Hole

Turn-Off Delay Time :

84 ns

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Lead Free :

Lead Free

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.22Ohm