STF20NM60D

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

290m Ω @ 10A, 10V

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

25 ns

JESD-609 Code :

e3

Power Dissipation-Max :

45W Tc

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Radiation Hardening :

No

Number of Terminations :

3

Terminal Position :

Single

Continuous Drain Current (ID) :

20A

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Drain-source On Resistance-Max :

0.29Ohm

Mounting Type :

Through Hole

Pin Count :

4

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

80A

Rise Time :

12ns

Base Part Number :

STF20

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Power Dissipation :

45W

Transistor Element Material :

SILICON

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

FDmesh™

Mount :

Through Hole

Operating Temperature :

-65°C~150°C TJ

Vgs (Max) :

±30V

Fall Time (Typ) :

22 ns

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

700 mJ