STF20N20
- Mfr.Part #
- STF20N20
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 18A TO220FP
- Stock
- 19,011
- In Stock :
- 19,011
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 72A
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3 Full Pack
- Packaging :
- Tube
- Case Connection :
- Isolated
- Terminal Finish :
- Tin
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 40 ns
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Fall Time (Typ) :
- 10 ns
- Rise Time :
- 30ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 200V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 200V
- Current Rating :
- 18A
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 25W
- Input Capacitance (Ciss) (Max) @ Vds :
- 940pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta
- Series :
- STripFET™ II
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- STF20
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 10A, 10V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 15 ns
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 25W Tc
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 18A
- FET Type :
- N-Channel
- Datasheets
- STF20N20

N-Channel Tube 125m Ω @ 10A, 10V ±20V 940pF @ 25V 39nC @ 10V TO-220-3 Full Pack
STF20N20 Overview
A device's maximum input capacitance is 940pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 18A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STF20N20 Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 72A.
STF20N20 Applications
There are a lot of STMicroelectronics
STF20N20 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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