STE250NS10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

100V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

Current Rating :

220A

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

900nC @ 10V

Pbfree Code :

yes

Case Connection :

Isolated

Package / Case :

ISOTOP

REACH SVHC :

No SVHC

Mount :

Chassis Mount, Screw

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

110 ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

1.1 μs

Rise Time :

380ns

Length :

38.2mm

FET Type :

N-Channel

Terminal Form :

UNSPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Width :

25.5mm

Power Dissipation-Max :

500W Tc

Fall Time (Typ) :

300 ns

Number of Pins :

4

Threshold Voltage :

3V

Height :

9.1mm

Mounting Type :

Chassis Mount

Radiation Hardening :

No

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Avalanche Energy Rating (Eas) :

800 mJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 125A, 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

220A Tc

Resistance :

5.5mOhm

Pulsed Drain Current-Max (IDM) :

880A

Base Part Number :

STE250

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

STripFET™

Continuous Drain Current (ID) :

220A

Vgs (Max) :

±20V

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

31000pF @ 25V

Power Dissipation :

500W

ECCN Code :

EAR99