STB9NK70ZT4
- Mfr.Part #
- STB9NK70ZT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 700V 7.5A D2PAK
- Stock
- 9,675
- In Stock :
- 9,675
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 115W
- Number of Pins :
- 3
- Series :
- SuperMESH™
- Number of Terminations :
- 2
- Vgs (Max) :
- ±30V
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 4A, 10V
- Base Part Number :
- STB9N
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 13 ns
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 115W Tc
- Continuous Drain Current (ID) :
- 7.5A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 245
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A Tc
- Pin Count :
- 3
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1370pF @ 25V
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 700V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 17ns
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 700V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Current Rating :
- 7.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 45 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Qualification Status :
- Not Qualified
- Datasheets
- STB9NK70ZT4

N-Channel Tape & Reel (TR) 1.2 Ω @ 4A, 10V ±30V 1370pF @ 25V 68nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB9NK70ZT4 Overview
A device's maximum input capacitance is 1370pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=700V, and this device has a drain-to-source breakdown voltage of 700V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB9NK70ZT4 Features
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 45 ns
STB9NK70ZT4 Applications
There are a lot of STMicroelectronics
STB9NK70ZT4 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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