SSM3K15AMFV,L3F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-F3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4V

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Flat

Published :

2014

Mounting Type :

Surface Mount

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

100mA Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Series :

U-MOSIII

Input Capacitance (Ciss) (Max) @ Vds :

13.5pF @ 3V

Drain-source On Resistance-Max :

6Ohm

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 10mA, 4V

Terminal Position :

Dual

Package / Case :

SOT-723

Mount :

Surface Mount

Vgs (Max) :

±20V

Power Dissipation-Max :

150mW Ta

Drain Current-Max (Abs) (ID) :

0.1A

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

100mA

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED