SSM3J355R,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs(th) (Max) @ Id :

1V @ 1mA

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-F3

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 10V

Factory Lead Time :

12 Weeks

RoHS Status :

RoHS Compliant

Series :

U-MOSVII

Package / Case :

SOT-23-3 Flat Leads

Drain Current-Max (Abs) (ID) :

6A

Number of Elements :

1

Surface Mount :

yes

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Terminal Position :

Dual

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Transistor Element Material :

SILICON

Vgs (Max) :

±10V

Published :

2016

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

30.1m Ω @ 4A, 4.5V

Drain-source On Resistance-Max :

0.0388Ohm