SQW61N65EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Product :

MOSFET

Packaging :

Rail/Tube

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 175 C

Pin Count :

3

Number of Channels :

1 Channel

Number of Elements per Chip :

1

Gate-Source Voltage (Max) :

±30(V)

Number of Elements :

1

Operating Temp Range :

-55C to 175C

Operating Temperature Classification :

Military

Polarity :

N

RoHS :

Details

Package :

Tube

Continuous Drain Current :

62(A)

Configuration :

Single

FET Type :

N-Channel

Vgs (Max) :

±30V

Type :

Power MOSFET

Power Dissipation (Max) :

625W (Tc)

Current - Continuous Drain (Id) @ 25°C :

62A (Tc)

Channel Mode :

Enhancement

Product Status :

Active

Channel Type :

N

Mounting Type :

Through Hole

Base Product Number :

SQW61

Power Dissipation :

625(W)

Operating Temperature :

-55°C ~ 175°C (TJ)

Manufacturer :

Vishay

Drain to Source Voltage (Vdss) :

650 V

Package / Case :

TO-247-3

Drain-Source On-Volt :

650(V)

Rise Time :

107 ns

Brand :

Vishay / Siliconix

Rad Hardened :

No

Continuous Drain Current Id :

62A

Gate Charge (Qg) (Max) @ Vgs :

344 nC @ 10 V

Package Type :

TO-247AD

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

52mOhm @ 32A, 10V

Transistor Type :

1 N-Channel

Qualification :

AEC-Q101

Supplier Device Package :

TO-247AD

Subcategory :

MOSFETs

Mounting Style :

Through Hole

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

7379 pF @ 100 V

Transistor Polarity :

N-Channel

FET Feature :

-

Series :

Automotive, AEC-Q101, E