SQW33N65EF-GE3
- Mfr.Part #
- SQW33N65EF-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- E SERIES POWER MOSFET WITH FAST
- Stock
- 519
- In Stock :
- 519
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 34A (Tc)
- Maximum Operating Temperature :
- + 175 C
- FET Type :
- N-Channel
- Product Type :
- MOSFET
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Package Type :
- TO-247AD
- Transistor Polarity :
- N-Channel
- Supplier Device Package :
- TO-247AD
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Product Status :
- Active
- Configuration :
- Single
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Packaging :
- Bulk
- Product Category :
- MOSFET
- Channel Type :
- N
- Channel Mode :
- Enhancement
- Series :
- Automotive, AEC-Q101, E
- Package :
- Bulk
- Continuous Drain Current Id :
- 34
- FET Feature :
- -
- Vgs (Max) :
- ±30V
- Manufacturer :
- Vishay
- Mounting Type :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Power Dissipation (Max) :
- 375W (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Number of Elements per Chip :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 173 nC @ 10 V
- Rds On (Max) @ Id, Vgs :
- 109mOhm @ 16.5A, 10V
- Qualification :
- AEC-Q101
- Tradename :
- TrenchFET
- RoHS :
- Details
- Input Capacitance (Ciss) (Max) @ Vds :
- 3972 pF @ 100 V
- Number of Channels :
- 2 Channel
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 77 ns
- Subcategory :
- MOSFETs
- Power Dissipation :
- 375
- Mounting Style :
- Through Hole
- Brand :
- Vishay / Siliconix
- Datasheets
- SQW33N65EF-GE3
N-Channel Bulk 109mOhm @ 16.5A, 10V ±30V 3972 pF @ 100 V 173 nC @ 10 V 650 V TO-247-3
SQW33N65EF-GE3 Overview
The maximum input capacitance of this device is 3972 pF @ 100 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 650 V in order to operate.
SQW33N65EF-GE3 Features
a 650 V drain to source voltage (Vdss)
SQW33N65EF-GE3 Applications
There are a lot of Vishay Siliconix
SQW33N65EF-GE3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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