SQP90P06-07L_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

320 mJ

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Input Capacitance (Ciss) (Max) @ Vds :

14280pF @ 25V

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

300W Tc

Drain-source On Resistance-Max :

0.0067Ohm

Drain Current-Max (Abs) (ID) :

120A

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

480A

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Series :

Automotive, AEC-Q101, TrenchFET®

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

ECCN Code :

EAR99

FET Type :

P-Channel

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 30A, 10V

RoHS Status :

Non-RoHS Compliant