SQD30N05-20L_GE3
- Mfr.Part #
- SQD30N05-20L_GE3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 30A TO252AA
- Stock
- 35,651
- In Stock :
- 35,651
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 175°C
- Threshold Voltage :
- 2V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Turn-Off Delay Time :
- 18 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 50W
- Mount :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- Turn On Delay Time :
- 7 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- TO-252AA
- Power Dissipation-Max :
- 50W Tc
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 20A, 10V
- Rds On Max :
- 20 mΩ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Input Capacitance :
- 1.175nF
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 5V
- Drain to Source Voltage (Vdss) :
- 55V
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Rise Time :
- 10ns
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 16mOhm
- Published :
- 2015
- Continuous Drain Current (ID) :
- 30A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1175pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 5 ns
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- REACH SVHC :
- Unknown
- Datasheets
- SQD30N05-20L_GE3
N-Channel Tape & Reel (TR) 20mOhm @ 20A, 10V ±20V 1175pF @ 25V 18nC @ 5V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
SQD30N05-20L_GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1175pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 18 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 16mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SQD30N05-20L_GE3 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 18 ns
single MOSFETs transistor is 16mOhm
a threshold voltage of 2V
a 55V drain to source voltage (Vdss)
SQD30N05-20L_GE3 Applications
There are a lot of Vishay Siliconix
SQD30N05-20L_GE3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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