SQ2308CES-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

205pF @ 30V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.3A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

2W Tc

Published :

2016

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

2W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G3

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101, TrenchFET®

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

150m Ω @ 2.3A, 10V

Factory Lead Time :

12 Weeks

Max Junction Temperature (Tj) :

175°C

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Turn On Delay Time :

4 ns

Number of Terminations :

3

Threshold Voltage :

2V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

5.3nC @ 10V

Number of Channels :

1

Turn-Off Delay Time :

12 ns

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-236AB

Gate to Source Voltage (Vgs) :

20V

Height :

1.12mm

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED