SPW15N60CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

330m Ω @ 9.4A, 10V

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Mounting Type :

Through Hole

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

13.4A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Number of Terminations :

3

Pin Count :

3

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

33A

Reach Compliance Code :

Compliant

Surface Mount :

No

JESD-609 Code :

e3

JEDEC-95 Code :

TO-247AD

Avalanche Energy Rating (Eas) :

460 mJ

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

13.4A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

156W Tc

Vgs(th) (Max) @ Id :

5V @ 750µA

Drain-source On Resistance-Max :

0.33Ohm

Package / Case :

TO-247-3

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1820pF @ 25V

Series :

CoolMOS™