SPP80N06S209

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Vgs (Max) :

±20V

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 50A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0091Ohm

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Additional Feature :

AVALANCHE RATED

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 125μA

DS Breakdown Voltage-Min :

55V

Power Dissipation-Max :

190W Tc

Package / Case :

TO-220-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

320A

Terminal Position :

Single

FET Type :

N-Channel

Pin Count :

3

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tube

Terminal Finish :

TIN LEAD

Input Capacitance (Ciss) (Max) @ Vds :

3140pF @ 25V

Drain Current-Max (Abs) (ID) :

80A

Mounting Type :

Through Hole

Published :

2003

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

370 mJ