SPP70N10L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

250W

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Voltage - Rated DC :

100V

Published :

1999

Current Rating :

70A

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

95 ns

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

70A

Power Dissipation-Max :

250W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 2mA

Input Capacitance (Ciss) (Max) @ Vds :

4540pF @ 25V

JESD-609 Code :

e3

Series :

SIPMOS®

Number of Elements :

1

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Contains Lead

Element Configuration :

Single

Number of Pins :

3

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

100V

Mounting Type :

Through Hole

Pin Count :

3

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

16m Ω @ 50A, 10V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Pulsed Drain Current-Max (IDM) :

280A

Avalanche Energy Rating (Eas) :

700 mJ

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.025Ohm

Transistor Element Material :

SILICON

Turn-Off Delay Time :

250 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

250ns