SPP47N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 2mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

RoHS Status :

Non-RoHS Compliant

Series :

SIPMOS®

Number of Elements :

1

Continuous Drain Current (ID) :

47A

Vgs (Max) :

±20V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

400 mJ

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

Pin Count :

3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

33m Ω @ 33A, 10V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Lead Free :

Contains Lead

Number of Terminations :

3

Qualification Status :

Not Qualified

Published :

2002

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Current Rating :

47A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.033Ohm

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

188A

Terminal Finish :

MATTE TIN

Voltage - Rated DC :

100V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Power Dissipation-Max :

175W Tc

FET Type :

N-Channel

Mount :

Through Hole