SPP35N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.044Ohm

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Pin Count :

3

Series :

SIPMOS®

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 25V

Package / Case :

TO-220-3

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Continuous Drain Current (ID) :

35A

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Rise Time :

63ns

Number of Elements :

1

Published :

2002

Qualification Status :

Not Qualified

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Avalanche Energy Rating (Eas) :

245 mJ

Current Rating :

35A

Rds On (Max) @ Id, Vgs :

44m Ω @ 26.4A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 83μA

Turn-Off Delay Time :

39 ns

Power Dissipation-Max :

150W Tc

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

100V

FET Type :

N-Channel

Power Dissipation :

150W

Fall Time (Typ) :

23 ns