SPD50N03S2-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

136W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 85µA

Voltage - Rated DC :

30V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

200A

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2170pF @ 25V

Current Rating :

50A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Published :

2003

Gate Charge (Qg) (Max) @ Vgs :

46.5nC @ 10V

Avalanche Energy Rating (Eas) :

250 mJ

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Turn-Off Delay Time :

27 ns

Pin Count :

4

Number of Elements :

1

Drain-source On Resistance-Max :

0.0073Ohm

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 50A, 10V

Lead Free :

Lead Free

Fall Time (Typ) :

25 ns

Terminal Form :

Gull wing

Power Dissipation-Max :

136W Tc

RoHS Status :

RoHS Compliant

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

50A

Vgs (Max) :

±20V

Number of Terminations :

2

Rise Time :

36ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount