SPB73N03S2L-08
- Mfr.Part #
- SPB73N03S2L-08
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 73A TO263-3
- Stock
- 7,470
- In Stock :
- 7,470
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 20ns
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Drain-source On Resistance-Max :
- 0.0131Ohm
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Reach Compliance Code :
- Unknown
- Published :
- 2003
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 46.2nC @ 10V
- Voltage - Rated DC :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 8.1m Ω @ 36A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Series :
- OptiMOS™
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 2V @ 55μA
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 73A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1710pF @ 25V
- Pin Count :
- 4
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Avalanche Energy Rating (Eas) :
- 170 mJ
- Peak Reflow Temperature (Cel) :
- 220
- Terminal Position :
- Single
- Current Rating :
- 73A
- Power Dissipation-Max :
- 107W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 73A Tc
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 320A
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SPB73N03S2L-08

N-Channel Tape & Reel (TR) 8.1m Ω @ 36A, 10V ±20V 1710pF @ 25V 46.2nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB73N03S2L-08 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 170 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1710pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 320A, its maximum pulsed drain current.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SPB73N03S2L-08 Features
the avalanche energy rating (Eas) is 170 mJ
a continuous drain current (ID) of 73A
based on its rated peak drain current 320A.
SPB73N03S2L-08 Applications
There are a lot of Infineon Technologies
SPB73N03S2L-08 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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