SPB35N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Vgs (Max) :

±20V

Series :

SIPMOS®

Power Dissipation-Max :

150W Tc

Published :

2002

Rise Time :

63ns

Avalanche Energy Rating (Eas) :

245 mJ

Number of Elements :

1

Power Dissipation :

150W

Rds On (Max) @ Id, Vgs :

44m Ω @ 26.4A, 10V

Drain-source On Resistance-Max :

0.044Ohm

Mounting Type :

Surface Mount

Voltage - Rated DC :

100V

ECCN Code :

EAR99

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 25V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 83μA

Continuous Drain Current (ID) :

35A

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Current Rating :

35A

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Packaging :

Tape and Reel (TR)