SPB21N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 44μA

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.08Ohm

Peak Reflow Temperature (Cel) :

220

JESD-609 Code :

e0

Series :

SIPMOS®

Avalanche Energy Rating (Eas) :

130 mJ

Current - Continuous Drain (Id) @ 25°C :

21A Tc

FET Type :

N-Channel

Power Dissipation-Max :

90W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

84A

Continuous Drain Current (ID) :

21A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Current Rating :

21A

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Number of Terminations :

2

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

865pF @ 25V

Voltage - Rated DC :

100V

Transistor Element Material :

SILICON

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

80m Ω @ 15A, 10V

Mount :

Surface Mount

Published :

2002

Pin Count :

4

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

38.4nC @ 10V