SIS892ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

40A

Series :

TrenchFET®

Height :

1.12mm

Resistance :

33mOhm

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

Unknown

JESD-30 Code :

S-PDSO-C5

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Mount :

Surface Mount

Published :

2013

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

33m Ω @ 10A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

1

Power Dissipation :

3.7W

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Turn-Off Delay Time :

16 ns

Power Dissipation-Max :

3.7W Ta 52W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

5 mJ

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1.5V

Drain to Source Breakdown Voltage :

100V

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

10 ns

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Contact Plating :

Tin

Radiation Hardening :

No

FET Type :

N-Channel

Continuous Drain Current (ID) :

7.4A

Length :

3.4mm

Package / Case :

PowerPAK® 1212-8

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

19.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 50V

ECCN Code :

EAR99

Element Configuration :

Single

Width :

3.4mm

Factory Lead Time :

14 Weeks

Terminal Position :

Dual

Lead Free :

Lead Free