SI7601DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

18 ns

Package / Case :

PowerPAK® 1212-8

Supplier Device Package :

PowerPAK® 1212-8

Series :

TrenchFET®

Max Operating Temperature :

150°C

Rise Time :

112ns

Width :

3.05mm

Turn-Off Delay Time :

53 ns

Input Capacitance :

1.87nF

Continuous Drain Current (ID) :

11.5A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

RoHS Status :

ROHS3 Compliant

Height :

1.04mm

Fall Time (Typ) :

80 ns

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 5V

FET Type :

P-Channel

Power Dissipation-Max :

3.8W Ta 52W Tc

Drain to Source Voltage (Vdss) :

20V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

19.2mOhm @ 11A, 4.5V

Drain to Source Resistance :

19mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1870pF @ 10V

Number of Elements :

1

Power Dissipation :

3.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-50°C

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Operating Temperature :

-50°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Number of Pins :

8

Length :

3.05mm

Mounting Type :

Surface Mount

Number of Channels :

1

Vgs (Max) :

±12V

Published :

2012

Rds On Max :

19.2 mΩ