SI7601DN-T1-E3
- Mfr.Part #
- SI7601DN-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 16A PPAK1212-8
- Stock
- 9,850
- In Stock :
- 9,850
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 5V
- Min Operating Temperature :
- -50°C
- Supplier Device Package :
- PowerPAK® 1212-8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.6V @ 250μA
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 3.8W Ta 52W Tc
- Drain to Source Resistance :
- 19mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Package / Case :
- PowerPAK® 1212-8
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Max Operating Temperature :
- 150°C
- Continuous Drain Current (ID) :
- 11.5A
- Length :
- 3.05mm
- Turn On Delay Time :
- 18 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1870pF @ 10V
- Fall Time (Typ) :
- 80 ns
- Width :
- 3.05mm
- Power Dissipation :
- 3.8W
- Element Configuration :
- Single
- Series :
- TrenchFET®
- Rds On (Max) @ Id, Vgs :
- 19.2mOhm @ 11A, 4.5V
- Number of Channels :
- 1
- Number of Pins :
- 8
- Published :
- 2012
- Vgs (Max) :
- ±12V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.04mm
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Temperature :
- -50°C~150°C TJ
- Input Capacitance :
- 1.87nF
- Gate to Source Voltage (Vgs) :
- 12V
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 112ns
- Turn-Off Delay Time :
- 53 ns
- Rds On Max :
- 19.2 mΩ
- Datasheets
- SI7601DN-T1-E3
P-Channel Tape & Reel (TR) 19.2mOhm @ 11A, 4.5V ±12V 1870pF @ 10V 27nC @ 5V 20V PowerPAK® 1212-8
SI7601DN-T1-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1870pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11.5A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.This device has a drain-to-source resistance of 19mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
SI7601DN-T1-E3 Features
a continuous drain current (ID) of 11.5A
the turn-off delay time is 53 ns
single MOSFETs transistor is 19mOhm
a 20V drain to source voltage (Vdss)
SI7601DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7601DN-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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