SI7601DN-T1-E3

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Mfr.Part #
SI7601DN-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8
Datasheet
Download
Description
MOSFET P-CH 20V 16A PPAK1212-8
Stock
9,850
In Stock :
9,850

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 5V
Min Operating Temperature :
-50°C
Supplier Device Package :
PowerPAK® 1212-8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
1.6V @ 250μA
FET Type :
P-Channel
Power Dissipation-Max :
3.8W Ta 52W Tc
Drain to Source Resistance :
19mOhm
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Package / Case :
PowerPAK® 1212-8
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Max Operating Temperature :
150°C
Continuous Drain Current (ID) :
11.5A
Length :
3.05mm
Turn On Delay Time :
18 ns
Input Capacitance (Ciss) (Max) @ Vds :
1870pF @ 10V
Fall Time (Typ) :
80 ns
Width :
3.05mm
Power Dissipation :
3.8W
Element Configuration :
Single
Series :
TrenchFET®
Rds On (Max) @ Id, Vgs :
19.2mOhm @ 11A, 4.5V
Number of Channels :
1
Number of Pins :
8
Published :
2012
Vgs (Max) :
±12V
RoHS Status :
ROHS3 Compliant
Height :
1.04mm
Drain to Source Voltage (Vdss) :
20V
Operating Temperature :
-50°C~150°C TJ
Input Capacitance :
1.87nF
Gate to Source Voltage (Vgs) :
12V
Packaging :
Tape and Reel (TR)
Rise Time :
112ns
Turn-Off Delay Time :
53 ns
Rds On Max :
19.2 mΩ
Datasheets
SI7601DN-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7601DN-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:PowerPAK® 1212-8, Number of Channels:1, Number of Pins:8, Operating Temperature:-50°C~150°C TJ, SI7601DN-T1-E3 pinout, SI7601DN-T1-E3 datasheet PDF, SI7601DN-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7601DN-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7601DN-T1-E3


P-Channel Tape & Reel (TR) 19.2mOhm @ 11A, 4.5V ±12V 1870pF @ 10V 27nC @ 5V 20V PowerPAK® 1212-8

SI7601DN-T1-E3 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1870pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11.5A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.This device has a drain-to-source resistance of 19mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.

SI7601DN-T1-E3 Features


a continuous drain current (ID) of 11.5A
the turn-off delay time is 53 ns
single MOSFETs transistor is 19mOhm
a 20V drain to source voltage (Vdss)


SI7601DN-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7601DN-T1-E3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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