SI4100DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Transistor Application :

SWITCHING

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Contact Plating :

Tin

Lead Free :

Lead Free

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Height :

1.55mm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mount :

Surface Mount

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

Radiation Hardening :

No

Turn On Delay Time :

10 ns

Number of Terminations :

8

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Element Configuration :

Single

Power Dissipation-Max :

2.5W Ta 6W Tc

Number of Channels :

1

Weight :

186.993455mg

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Length :

5mm

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.063Ohm

Rds On (Max) @ Id, Vgs :

63m Ω @ 4.4A, 10V

Drain to Source Voltage (Vdss) :

100V

Continuous Drain Current (ID) :

4.4A

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Turn-Off Delay Time :

15 ns

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 50V

Power Dissipation :

2.5W

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

20A

Rise Time :

12ns