SI4100DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.55mm

Weight :

186.993455mg

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Fall Time (Typ) :

10 ns

Width :

4mm

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

20A

Drain-source On Resistance-Max :

0.063Ohm

FET Type :

N-Channel

Number of Pins :

8

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

63m Ω @ 4.4A, 10V

Published :

2009

Rise Time :

12ns

Length :

5mm

Radiation Hardening :

No

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Turn On Delay Time :

10 ns

Power Dissipation-Max :

2.5W Ta 6W Tc

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

ECCN Code :

EAR99

Power Dissipation :

2.5W

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 50V

Drain to Source Voltage (Vdss) :

100V

Continuous Drain Current (ID) :

4.4A

Turn-Off Delay Time :

15 ns

Lead Free :

Lead Free