SI4100DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Turn On Delay Time :

10 ns

Power Dissipation-Max :

2.5W Ta 6W Tc

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Weight :

186.993455mg

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 50V

Fall Time (Typ) :

10 ns

Pulsed Drain Current-Max (IDM) :

20A

Mount :

Surface Mount

Rise Time :

12ns

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Published :

2009

Continuous Drain Current (ID) :

4.4A

Turn-Off Delay Time :

15 ns

Contact Plating :

Tin

Drain-source On Resistance-Max :

0.063Ohm

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

63m Ω @ 4.4A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

4mm

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Vgs (Max) :

±20V

Power Dissipation :

2.5W

Number of Pins :

8

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Height :

1.55mm

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Pin Count :

8

FET Type :

N-Channel

Pbfree Code :

yes

Length :

5mm

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

ECCN Code :

EAR99

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ