SI3443DV

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Mfr.Part #
SI3443DV
Manufacturer
Infineon Technologies
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET P-CH 20V 4.4A MICRO6
Stock
9,000
In Stock :
9,000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
-4A
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Transistor Application :
SWITCHING
Terminal Finish :
Tin (Sn)
Lifecycle Status :
ACTIVE (Last Updated: 14 hours ago)
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
640pF @ 10V
Rds On (Max) @ Id, Vgs :
65m Ω @ 4A, 4.5V
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
8V
Terminal Form :
Gull wing
Current - Continuous Drain (Id) @ 25°C :
4A Ta
Vgs (Max) :
±8V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
1.6W
Fall Time (Typ) :
19 ns
Threshold Voltage :
-700mV
Radiation Hardening :
No
Turn-Off Delay Time :
26 ns
Number of Pins :
6
Operating Temperature :
-55°C~150°C TJ
Weight :
36mg
Turn On Delay Time :
11 ns
Rise Time :
19ns
Power Dissipation-Max :
1.6W Ta
Packaging :
Cut Tape (CT)
Element Configuration :
Single
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
4A
Drain to Source Breakdown Voltage :
-20V
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
PowerTrench®
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Number of Terminations :
6
Lead Free :
Lead Free
Number of Elements :
1
FET Type :
P-Channel
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
20V
Factory Lead Time :
10 Weeks
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 4.5V
Terminal Position :
Dual
REACH SVHC :
No SVHC
Datasheets
SI3443DV
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SI3443DV from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Terminations:6, SI3443DV pinout, SI3443DV datasheet PDF, SI3443DV amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SI3443DV ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SI3443DV


P-Channel Cut Tape (CT) 65m Ω @ 4A, 4.5V ±8V 640pF @ 10V 10nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6

SI3443DV Description


Fairchild's innovative PowerTrench process was specifically tuned to minimize on-state resistance while maintaining low gate charge for enhanced switching performance in this P-Channel 2.6V MOSFET. These devices were created to provide outstanding power dissipation in a tiny container for situations where larger products are not feasible.



SI3443DV Features


?-4 A, -20 V. = 0.065 £2 @ V* = 45 V RoS(ON| =0.100 Q@Vgs = -2.5V RoS(ON| =0.100 Q@Vgs = -2.5V


?Extremely fast switching speed.


?Low entry fee (7.2nC typical).


?Extremely low Rdsionj thanks to high-performance trench technology


?Small footprint (72 percent smaller than conventional SO-8) and low profile of the SuperSOPM-6 package (1mm thick).



SI3443DV Applications


?Turn on the load switch


?Protection against battery drain


?Effective power management


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