SI1469DH-T1-E3

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Mfr.Part #
SI1469DH-T1-E3
Manufacturer
Vishay
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET P-CH 20V 2.7A SC70-6
Stock
3,538
In Stock :
3,538

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
6-TSSOP, SC-88, SOT-363
Width :
1.25mm
Published :
2014
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Fall Time (Typ) :
9 ns
Height :
1mm
REACH SVHC :
Unknown
FET Type :
P-Channel
Gate to Source Voltage (Vgs) :
12V
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 4.5V
Pin Count :
6
Current - Continuous Drain (Id) @ 25°C :
2.7A Tc
Mount :
Surface Mount
Drain Current-Max (Abs) (ID) :
3.2A
Power Dissipation-Max :
1.5W Ta 2.78W Tc
Input Capacitance (Ciss) (Max) @ Vds :
470pF @ 10V
Number of Pins :
6
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
20V
Rds On (Max) @ Id, Vgs :
80m Ω @ 2A, 10V
Length :
2mm
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
14 Weeks
Series :
TrenchFET®
Power Dissipation :
1.5W
Turn-Off Delay Time :
22 ns
Transistor Element Material :
SILICON
Terminal Finish :
Matte Tin (Sn)
Rise Time :
20ns
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1
Pulsed Drain Current-Max (IDM) :
8A
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 10V
Drain to Source Breakdown Voltage :
-20V
Vgs (Max) :
±12V
Terminal Position :
Dual
Radiation Hardening :
No
Pbfree Code :
yes
Continuous Drain Current (ID) :
1.6A
ECCN Code :
EAR99
Number of Elements :
1
Threshold Voltage :
-1.5V
Weight :
7.512624mg
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
6
Lead Free :
Lead Free
Turn On Delay Time :
5 ns
Resistance :
80mOhm
Datasheets
SI1469DH-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1469DH-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:6-TSSOP, SC-88, SOT-363, Mounting Type:Surface Mount, Number of Pins:6, Number of Channels:1, Number of Terminations:6, SI1469DH-T1-E3 pinout, SI1469DH-T1-E3 datasheet PDF, SI1469DH-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1469DH-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1469DH-T1-E3


P-Channel Tape & Reel (TR) 80m Ω @ 2A, 10V ±12V 470pF @ 10V 8.5nC @ 4.5V 20V 6-TSSOP, SC-88, SOT-363

SI1469DH-T1-E3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 470pF @ 10V.This device conducts a continuous drain current (ID) of 1.6A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3.2A.When the device is turned off, a turn-off delay time of 22 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 8A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 10V volts (2.5V 10V).

SI1469DH-T1-E3 Features


a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 8A.
a threshold voltage of -1.5V
a 20V drain to source voltage (Vdss)


SI1469DH-T1-E3 Applications


There are a lot of Vishay Siliconix
SI1469DH-T1-E3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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