SI1071X-T1-E3
- Mfr.Part #
- SI1071X-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 0.96A SOT563F
- Stock
- 7,922
- In Stock :
- 7,922
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Termination :
- SMD/SMT
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2015
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- -1.45V
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 13.3nC @ 10V
- Rds On Max :
- 167 mΩ
- Number of Elements :
- 1
- Rise Time :
- 25ns
- Packaging :
- Tape and Reel (TR)
- Weight :
- 32.006612mg
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.45V @ 250μA
- Mount :
- Surface Mount
- Resistance :
- 244mOhm
- Drain to Source Resistance :
- 244mOhm
- Continuous Drain Current (ID) :
- 960mA
- Max Operating Temperature :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 25 ns
- Width :
- 1.2mm
- Supplier Device Package :
- SC-89-6
- Nominal Vgs :
- -1.45 V
- Turn On Delay Time :
- 13 ns
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 315pF @ 15V
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 12V
- Height :
- 600μm
- Drain to Source Voltage (Vdss) :
- 30V
- Dual Supply Voltage :
- -30V
- Series :
- TrenchFET®
- Package / Case :
- SOT-563, SOT-666
- Number of Pins :
- 6
- Input Capacitance :
- 315pF
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 236mW Ta
- Power Dissipation :
- 236μW
- Length :
- 1.7mm
- Rds On (Max) @ Id, Vgs :
- 167mOhm @ 960mA, 10V
- Vgs (Max) :
- ±12V
- Turn-Off Delay Time :
- 36 ns
- Datasheets
- SI1071X-T1-E3
P-Channel Tape & Reel (TR) 167mOhm @ 960mA, 10V ±12V 315pF @ 15V 13.3nC @ 10V 30V SOT-563, SOT-666
SI1071X-T1-E3 Overview
A device's maximum input capacitance is 315pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 960mA for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 36 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 244mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -1.45V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 10V) to reduce its overall power consumption.
SI1071X-T1-E3 Features
a continuous drain current (ID) of 960mA
the turn-off delay time is 36 ns
single MOSFETs transistor is 244mOhm
a threshold voltage of -1.45V
a 30V drain to source voltage (Vdss)
SI1071X-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1071X-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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