SI1069X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

6

Rise Time :

31ns

Fall Time (Typ) :

31 ns

Published :

2014

Width :

1.2mm

Element Configuration :

Single

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

6

Terminal Position :

Dual

Vgs (Max) :

±12V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Number of Channels :

1

Number of Terminations :

6

JESD-609 Code :

e3

Radiation Hardening :

No

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Height :

600μm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

236mW Ta

Continuous Drain Current (ID) :

940mA

Length :

1.7mm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

308pF @ 10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

12V

Package / Case :

SOT-563, SOT-666

Gate Charge (Qg) (Max) @ Vgs :

6.86nC @ 5V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.94A

Terminal Form :

Flat

Turn On Delay Time :

19 ns

Weight :

32.006612mg

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-20V

Turn-Off Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

184m Ω @ 940mA, 4.5V