SI1013X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOW THRESHOLD

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 350mA, 4.5V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Published :

2012

ECCN Code :

EAR99

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

250mW Ta

Fall Time (Typ) :

9 ns

Weight :

29.993795mg

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

35 ns

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Number of Channels :

1

Vgs (Max) :

±6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

1.7mm

Number of Pins :

3

Turn On Delay Time :

5 ns

Resistance :

1.2Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

SC-89, SOT-490

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Pbfree Code :

yes

Transistor Application :

SWITCHING

Terminal Form :

Flat

Continuous Drain Current (ID) :

-400mA

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

6V

Rise Time :

9ns

Packaging :

Tape and Reel (TR)

Height :

800μm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Elements :

1

Power Dissipation :

250mW

Drain to Source Breakdown Voltage :

-20V

Terminal Position :

Dual

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Width :

950μm

Number of Terminations :

3

JESD-609 Code :

e3

Threshold Voltage :

-450mV

FET Type :

P-Channel