SI1013X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Rds On Max :

1.2 Ω

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 350mA, 4.5V

Supplier Device Package :

SC-89-3

Power Dissipation :

250mW

Element Configuration :

Single

Max Operating Temperature :

150°C

Power Dissipation-Max :

250mW Ta

Resistance :

1.2Ohm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

1.2Ohm

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Length :

1.6764mm

Continuous Drain Current (ID) :

-350mA

Width :

939.8μm

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

6V

Fall Time (Typ) :

11 ns

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Height :

787.4μm

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Turn On Delay Time :

5 ns

Turn-Off Delay Time :

35 ns

Package / Case :

SC-89, SOT-490

Rise Time :

9ns

Vgs (Max) :

±6V

Published :

2009

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Lead Free :

Lead Free