SI1013R-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-20V

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Resistance :

1.2Ohm

Package / Case :

SC-75A

Rise Time :

9ns

RoHS Status :

ROHS3 Compliant

Rds On Max :

1.2 Ω

Vgs (Max) :

±6V

Power Dissipation :

150mW

Element Configuration :

Single

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Length :

1.58mm

Number of Elements :

1

Number of Pins :

3

Radiation Hardening :

No

Turn On Delay Time :

5 ns

Fall Time (Typ) :

9 ns

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Width :

760μm

Drain to Source Resistance :

1.2Ohm

Height :

700μm

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 350mA, 4.5V

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

35 ns

Number of Channels :

1

Continuous Drain Current (ID) :

-350mA

Published :

2017

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Supplier Device Package :

SC-75A

Max Operating Temperature :

150°C

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

6V

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

150mW Ta