SI1013CX-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

760m Ω @ 400mA, 4.5V

Turn-Off Delay Time :

9 ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

5 ns

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Terminal Form :

Flat

Published :

2017

Continuous Drain Current (ID) :

450mA

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

Drain Current-Max (Abs) (ID) :

0.45A

Number of Channels :

1

Rise Time :

8ns

Package / Case :

SC-89, SOT-490

Mounting Type :

Surface Mount

Mount :

Surface Mount

Series :

TrenchFET®

Power Dissipation :

190mW

FET Type :

P-Channel

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Turn On Delay Time :

1 ns

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-20V

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

3

Power Dissipation-Max :

190mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Vgs (Max) :

±8V

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.76Ohm

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 10V