SI1012X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

20V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Threshold Voltage :

900mV

Contact Plating :

Tin

Pin Count :

3

Gate to Source Voltage (Vgs) :

6V

Series :

TrenchFET®

FET Type :

N-Channel

Turn-Off Delay Time :

25 ns

Additional Feature :

LOW THRESHOLD

Transistor Element Material :

SILICON

Mount :

Surface Mount

Lead Free :

Lead Free

Weight :

29.993795mg

RoHS Status :

ROHS3 Compliant

Width :

950μm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mounting Type :

Surface Mount

Number of Pins :

3

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Turn On Delay Time :

5 ns

ECCN Code :

EAR99

Vgs (Max) :

±6V

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Radiation Hardening :

No

Rise Time :

5ns

Number of Elements :

1

Length :

1.7mm

Resistance :

700mOhm

Fall Time (Typ) :

5 ns

Power Dissipation-Max :

250mW Ta

Vgs(th) (Max) @ Id :

900mV @ 250μA

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Rds On (Max) @ Id, Vgs :

700m Ω @ 600mA, 4.5V

REACH SVHC :

Unknown

Pbfree Code :

yes

Number of Channels :

1

Package / Case :

SC-89, SOT-490

Element Configuration :

Single

Height :

800μm

Power Dissipation :

250mW

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.5A

Terminal Position :

Dual

Continuous Drain Current (ID) :

600mA