SI1012X-T1-E3

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Mfr.Part #
SI1012X-T1-E3
Manufacturer
Vishay
Package / Case
SC-89, SOT-490
Datasheet
Download
Description
MOSFET N-CH 20V 500MA SC89-3
Stock
26,787
In Stock :
26,787

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
5 ns
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
5 ns
Resistance :
700mOhm
Vgs (Max) :
±6V
Package / Case :
SC-89, SOT-490
Length :
1.7mm
Rds On (Max) @ Id, Vgs :
700mOhm @ 600mA, 4.5V
Termination :
SMD/SMT
FET Type :
N-Channel
Weight :
29.993795mg
Published :
2014
Gate Charge (Qg) (Max) @ Vgs :
0.75nC @ 4.5V
Mounting Type :
Surface Mount
Rds On Max :
700 mΩ
Width :
950μm
Dual Supply Voltage :
20V
Series :
TrenchFET®
Threshold Voltage :
900mV
Mount :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
250mW
Number of Elements :
1
Drain to Source Voltage (Vdss) :
20V
Continuous Drain Current (ID) :
500mA
Drain to Source Breakdown Voltage :
20V
Number of Pins :
3
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
500mA Ta
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Max Operating Temperature :
150°C
Min Operating Temperature :
-55°C
Supplier Device Package :
SC-89-3
Rise Time :
5ns
Height :
800μm
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
900mV @ 250μA
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
6V
Drain to Source Resistance :
700mOhm
Power Dissipation-Max :
250mW Ta
Turn-Off Delay Time :
25 ns
Nominal Vgs :
900 mV
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Datasheets
SI1012X-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1012X-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-89, SOT-490, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1, SI1012X-T1-E3 pinout, SI1012X-T1-E3 datasheet PDF, SI1012X-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1012X-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1012X-T1-E3


N-Channel Tape & Reel (TR) 700mOhm @ 600mA, 4.5V ±6V 0.75nC @ 4.5V 20V SC-89, SOT-490

SI1012X-T1-E3 Overview


A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 500mA.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 25 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 700mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.900mV is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.

SI1012X-T1-E3 Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 700mOhm
a threshold voltage of 900mV
a 20V drain to source voltage (Vdss)


SI1012X-T1-E3 Applications


There are a lot of Vishay Siliconix
SI1012X-T1-E3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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