SI1012R-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

1.58mm

Mounting Type :

Surface Mount

Drain to Source Resistance :

850mOhm

Element Configuration :

Single

Threshold Voltage :

800mV

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

900mV @ 250μA

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation-Max :

150mW Ta

Gate to Source Voltage (Vgs) :

6V

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Rds On (Max) @ Id, Vgs :

700mOhm @ 600mA, 4.5V

Mount :

Surface Mount

Fall Time (Typ) :

5 ns

Continuous Drain Current (ID) :

500mA

Max Operating Temperature :

150°C

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

25 ns

Height :

700μm

Width :

760μm

Rds On Max :

700 mΩ

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SC-75A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Published :

2017

Power Dissipation :

150mW

Drain to Source Breakdown Voltage :

20V

Vgs (Max) :

±6V

Rise Time :

5ns

Turn On Delay Time :

5 ns

Supplier Device Package :

SC-75A

Lead Free :

Lead Free

Min Operating Temperature :

-55°C