SFR9110TF
- Mfr.Part #
- SFR9110TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 2.8A DPAK
- Stock
- 6,060
- In Stock :
- 6,060
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 1.4A, 10V
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Finish :
- MATTE TIN
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Pin Count :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 2.5W Ta 20W Tc
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 335pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 2
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 100V
- Avalanche Energy Rating (Eas) :
- 31 mJ
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 11A
- Drain Current-Max (Abs) (ID) :
- 2.8A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- SFR9110TF

P-Channel Tape & Reel (TR) 1.2 Ω @ 1.4A, 10V ±30V 335pF @ 25V 10nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
SFR9110TF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 31 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 335pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 2.8A.Pulsed drain current is maximum rated peak drain current 11A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SFR9110TF Features
the avalanche energy rating (Eas) is 31 mJ
based on its rated peak drain current 11A.
a 100V drain to source voltage (Vdss)
SFR9110TF Applications
There are a lot of Rochester Electronics, LLC
SFR9110TF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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