SFM9110TF
- Mfr.Part #
- SFM9110TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 1A SOT223-4
- Stock
- 1,396
- In Stock :
- 1,396
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- MATTE TIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 2.52W Ta
- Drain Current-Max (Abs) (ID) :
- 1A
- Input Capacitance (Ciss) (Max) @ Vds :
- 335pF @ 25V
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 8A
- JESD-30 Code :
- R-PDSO-G4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 500mA, 10V
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 53 mJ
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- FET Type :
- P-Channel
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 1A Ta
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Datasheets
- SFM9110TF

P-Channel Tape & Reel (TR) 1.2 Ω @ 500mA, 10V ±30V 335pF @ 25V 10nC @ 10V 100V TO-261-4, TO-261AA
SFM9110TF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 53 mJ.The maximum input capacitance of this device is 335pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 1A.There is no pulsed drain current maximum for this device based on its rated peak drain current 8A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
SFM9110TF Features
the avalanche energy rating (Eas) is 53 mJ
based on its rated peak drain current 8A.
a 100V drain to source voltage (Vdss)
SFM9110TF Applications
There are a lot of Rochester Electronics, LLC
SFM9110TF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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| SFM9014TF | Fairchild Semiconductor | 2,900 | MOSFET P-CH 60V 1.8A SOT223-4 |
| SFM9014TF | Fairchild Semiconductor | 2,900 | MOSFET P-CH 60V 1.8A SOT223-4 |
| SFM9110TF | Fairchild Semiconductor | 1,396 | MOSFET P-CH 100V 1A SOT223-4 |
















