SCH1331-TL-W
- Mfr.Part #
- SCH1331-TL-W
- Manufacturer
- onsemi
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- POWER MOSFET
- Stock
- 10,000
- In Stock :
- 10,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 8.8 ns
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 1W Ta
- Gate to Source Voltage (Vgs) :
- 10V
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Rise Time :
- 80ns
- Number of Pins :
- 6
- Drain-source On Resistance-Max :
- 0.084Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 405pF @ 6V
- Vgs(th) (Max) @ Id :
- 1.3V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Packaging :
- Cut Tape (CT)
- Fall Time (Typ) :
- 50 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Lead Free :
- Lead Free
- Published :
- 2013
- Number of Terminations :
- 6
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6nC @ 4.5V
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 41 ns
- Drain Current-Max (Abs) (ID) :
- 3A
- DS Breakdown Voltage-Min :
- 12V
- Rds On (Max) @ Id, Vgs :
- 84m Ω @ 1.5A, 4.5V
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Package / Case :
- SOT-563, SOT-666
- FET Type :
- P-Channel
- Vgs (Max) :
- ±10V
- Factory Lead Time :
- 4 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Threshold Voltage :
- -1.3V
- Terminal Form :
- Flat
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 3A
- JESD-609 Code :
- e6
- Drain to Source Voltage (Vdss) :
- 12V
- Mounting Type :
- Surface Mount
- Datasheets
- SCH1331-TL-W

P-Channel Cut Tape (CT) 84m Ω @ 1.5A, 4.5V ±10V 405pF @ 6V 5.6nC @ 4.5V 12V SOT-563, SOT-666
SCH1331-TL-W Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 405pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.A device can conduct a maximum continuous current of [3A] according to its drain current.It is [41 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1.3V.The DS breakdown voltage should be maintained above 12V to maintain normal operation.To operate this transistor, you will need a 12V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4.5V).
SCH1331-TL-W Features
a continuous drain current (ID) of 3A
the turn-off delay time is 41 ns
a threshold voltage of -1.3V
a 12V drain to source voltage (Vdss)
SCH1331-TL-W Applications
There are a lot of ON Semiconductor
SCH1331-TL-W applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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