SBCX19LT1G
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- Mfr.Part #
- SBCX19LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 2,373
- In Stock ：
- 2,373
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 620mV
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Published :
- 2005
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Form :
- Gull wing
- Length :
- 3.04mm
- Polarity/Channel Type :
- NPN
- hFE Min :
- 100
- Number of Terminations :
- 3
- Width :
- 1.4mm
- Continuous Collector Current :
- 500mA
- Pin Count :
- 3
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Height :
- 1.01mm
- Base Part Number :
- BCX19
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 620mV @ 50mA, 500mA
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- Max Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- SBCX19LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBCX19LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 620mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 620mV @ 50mA, 500mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 500mA volts.
SBCX19LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
SBCX19LT1G Applications
There are a lot of ON Semiconductor
SBCX19LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| SBCX19LT1 | onsemi | 26,630 | TRANS NPN 45V 0.5A SOT23-3 |
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