SBCX19LT1
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- Mfr.Part #
- SBCX19LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 26,630
- In Stock ：
- 26,630
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 500mA
- Number of Elements :
- 1
- Base Part Number :
- BCX19
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 620mV
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 50V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Continuous Collector Current :
- 500mA
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Height :
- 1.01mm
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 620mV @ 50mA, 500mA
- Terminal Finish :
- Tin (Sn)
- Length :
- 3.04mm
- Collector Emitter Breakdown Voltage :
- 45V
- Series :
- Automotive, AEC-Q101
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Width :
- 1.4mm
- Published :
- 2005
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- SBCX19LT1
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBCX19LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 620mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 620mV @ 50mA, 500mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 500mA volts.
SBCX19LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
SBCX19LT1G Applications
There are a lot of ON Semiconductor
SBCX19LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| SBCX19LT1G | onsemi | 2,373 | TRANS NPN 45V 0.5A SOT23-3 |
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