S29CD016J0MQAM113

Manufacturer :

Infineon Technologies

Product Category :

Memory

Programming Voltage :

2.7V

HTS Code :

8542.32.00.51

Supply Voltage :

2.6V

Memory Width :

32

Power Supplies :

1.8/2.62.6V

JESD-30 Code :

R-PQFP-G80

Organization :

512KX32

Number of Terminations :

80

Data Polling :

yes

Common Flash Interface :

yes

Width :

14mm

Operating Temperature :

-40°C~125°C TA

Memory Type :

Non-Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Supply :

1.65V~2.75V

Access Time :

54ns

RoHS Status :

Non-RoHS Compliant

Toggle Bit :

yes

Boot Block :

BOTTOM

Peak Reflow Temperature (Cel) :

240

Package / Case :

80-BQFP

Ready/Busy :

yes

Height Seated (Max) :

3.35mm

Terminal Pitch :

0.8mm

Operating Mode :

ASYNCHRONOUS

Packaging :

Tape and Reel (TR)

Sector Size :

2K16K

Memory Size :

16Mb 512K x 32

Supply Voltage-Min (Vsup) :

2.5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Sectors/Size :

1630

Series :

CD-J

Time@Peak Reflow Temperature-Max (s) :

30

Memory Density :

16777216 bit

Additional Feature :

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

Supply Current-Max :

0.09mA

Surface Mount :

yes

ECCN Code :

EAR99

Memory Interface :

Parallel

Standby Current-Max :

0.00006A

Length :

20mm

Terminal Position :

QUAD

Mounting Type :

Surface Mount

Factory Lead Time :

7 Weeks

Command User Interface :

yes

Qualification Status :

Not Qualified

Supply Voltage-Max (Vsup) :

2.75V

JESD-609 Code :

e0

Write Cycle Time - Word, Page :

60ns

Clock Frequency :

56MHz

Memory Format :

Flash

Number of Functions :

1