S29CD016J0MQAM113

Manufacturer :

Infineon Technologies

Product Category :

Memory

JESD-609 Code :

e0

Number of Functions :

1

Programming Voltage :

2.7V

Operating Mode :

ASYNCHRONOUS

Factory Lead Time :

7 Weeks

Sector Size :

2K16K

Number of Sectors/Size :

1630

Voltage - Supply :

1.65V~2.75V

HTS Code :

8542.32.00.51

Memory Format :

Flash

Memory Size :

16Mb 512K x 32

ECCN Code :

EAR99

JESD-30 Code :

R-PQFP-G80

Supply Voltage-Max (Vsup) :

2.75V

Standby Current-Max :

0.00006A

Data Polling :

yes

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Power Supplies :

1.8/2.62.6V

Height Seated (Max) :

3.35mm

Supply Voltage :

2.6V

Access Time :

54ns

Supply Current-Max :

0.09mA

RoHS Status :

Non-RoHS Compliant

Common Flash Interface :

yes

Number of Terminations :

80

Package / Case :

80-BQFP

Ready/Busy :

yes

Clock Frequency :

56MHz

Additional Feature :

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

Surface Mount :

yes

Memory Density :

16777216 bit

Command User Interface :

yes

Memory Interface :

Parallel

Write Cycle Time - Word, Page :

60ns

Terminal Position :

QUAD

Boot Block :

BOTTOM

Length :

20mm

Memory Width :

32

Terminal Finish :

Tin/Lead (Sn/Pb)

Qualification Status :

Not Qualified

Organization :

512KX32

Supply Voltage-Min (Vsup) :

2.5V

Terminal Pitch :

0.8mm

Packaging :

Tape and Reel (TR)

Width :

14mm

Peak Reflow Temperature (Cel) :

240

Operating Temperature :

-40°C~125°C TA

Memory Type :

Non-Volatile

Series :

CD-J

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Toggle Bit :

yes