S29CD016J0MFAM113

Manufacturer :

Infineon Technologies

Product Category :

Memory

JESD-609 Code :

e0

Write Cycle Time - Word, Page :

60ns

Supply Voltage :

2.6V

Ready/Busy :

yes

Operating Temperature :

-40°C~125°C TA

Package / Case :

80-LBGA

Memory Size :

16Mb 512K x 32

HTS Code :

8542.32.00.51

JESD-30 Code :

R-PBGA-B80

Memory Width :

32

Voltage - Supply :

1.65V~2.75V

Power Supplies :

1.8/2.62.6V

Command User Interface :

yes

Programming Voltage :

2.7V

Access Time :

54ns

ECCN Code :

EAR99

Number of Terminations :

80

Memory Interface :

Parallel

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Height Seated (Max) :

1.4mm

Surface Mount :

yes

Series :

CD-J

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

240

Width :

11mm

Sector Size :

2K16K

Clock Frequency :

56MHz

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Format :

Flash

Data Polling :

yes

Toggle Bit :

yes

Number of Sectors/Size :

1630

Organization :

512KX32

Common Flash Interface :

yes

Supply Voltage-Max (Vsup) :

2.75V

Supply Voltage-Min (Vsup) :

2.5V

Terminal Pitch :

1mm

Factory Lead Time :

7 Weeks

Supply Current-Max :

0.09mA

Number of Functions :

1

Memory Type :

Non-Volatile

Additional Feature :

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

Terminal Finish :

TIN LEAD

Standby Current-Max :

0.00006A

Boot Block :

BOTTOM

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ASYNCHRONOUS

Packaging :

Tape and Reel (TR)

Memory Density :

16777216 bit

Length :

13mm