RV2C010UNT2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

470m Ω @ 500mA, 4.5V

Number of Pins :

1006

Number of Terminations :

3

Threshold Voltage :

1V

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

FET Type :

N-Channel

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

1A

DS Breakdown Voltage-Min :

20V

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

REACH SVHC :

No SVHC

Packaging :

Cut Tape (CT)

Terminal Form :

NO LEAD

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

Package / Case :

SC-101, SOT-883

Power Dissipation-Max :

400mW Ta

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PBCC-N3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1A

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistance :

340mOhm

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Published :

2014

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ