RHP020N06T100

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Current Rating :

2A

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 10V

Number of Pins :

3

Pin Count :

3

Number of Elements :

1

Terminal Form :

Flat

Element Configuration :

Single

Voltage - Rated DC :

60V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Transistor Application :

SWITCHING

Published :

2006

Power Dissipation :

2W

Turn-Off Delay Time :

22 ns

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

JESD-609 Code :

e2

Terminal Finish :

TIN COPPER

Turn On Delay Time :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Continuous Drain Current (ID) :

2A

Drain Current-Max (Abs) (ID) :

2A

Rds On (Max) @ Id, Vgs :

200m Ω @ 2A, 10V

Time@Peak Reflow Temperature-Max (s) :

10

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Threshold Voltage :

2.5V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-243AA

Power Dissipation-Max :

500mW Ta

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.21.00.95

Number of Terminations :

3

Radiation Hardening :

No

Fall Time (Typ) :

18 ns

ECCN Code :

EAR99

Case Connection :

DRAIN

Transistor Element Material :

SILICON