RFP50N06
- Mfr.Part #
- RFP50N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220-3
- Stock
- 1,322
- In Stock :
- 1,322
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Pbfree Code :
- No
- Operating Temperature :
- -55°C~175°C TJ
- DS Breakdown Voltage-Min :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Drain Current-Max (Abs) (ID) :
- 50A
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 50A, 10V
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain-source On Resistance-Max :
- 0.022Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.02pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 60V
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 20V
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 131W Tc
- Terminal Finish :
- TIN LEAD
- JESD-609 Code :
- e0
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- RFP50N06

N-Channel Tube 22m Ω @ 50A, 10V ±20V 2.02pF @ 25V 150nC @ 20V 60V TO-220-3
RFP50N06 Overview
A device's maximal input capacitance is 2.02pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 50A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
RFP50N06 Features
a 60V drain to source voltage (Vdss)
RFP50N06 Applications
There are a lot of Rochester Electronics, LLC
RFP50N06 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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