RFP50N06
- Mfr.Part #
- RFP50N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220-3
- Stock
- 1,322
- In Stock :
- 1,322
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 50A, 10V
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- DRAIN
- Qualification Status :
- COMMERCIAL
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 20V
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.02pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 50A
- Power Dissipation-Max :
- 131W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 60V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.022Ohm
- FET Type :
- N-Channel
- Pbfree Code :
- No
- Terminal Finish :
- TIN LEAD
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e0
- Datasheets
- RFP50N06

N-Channel Tube 22m Ω @ 50A, 10V ±20V 2.02pF @ 25V 150nC @ 20V 60V TO-220-3
RFP50N06 Overview
A device's maximal input capacitance is 2.02pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 50A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
RFP50N06 Features
a 60V drain to source voltage (Vdss)
RFP50N06 Applications
There are a lot of Rochester Electronics, LLC
RFP50N06 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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