RFP40N10

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Mfr.Part #
RFP40N10
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 40A TO220-3
Stock
7,122
In Stock :
7,122

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Min Operating Temperature :
-55°C
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
300nC @ 20V
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
100V
Max Operating Temperature :
175°C
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
40mOhm @ 40A, 10V
Power Dissipation :
160W
Threshold Voltage :
4V
Current :
40A
Continuous Drain Current (ID) :
40A
Rds On Max :
40 mΩ
Fall Time (Typ) :
20 ns
Element Configuration :
Single
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
160W Tc
Operating Temperature :
-55°C~175°C TJ
Supplier Device Package :
TO-220-3
Turn-Off Delay Time :
42 ns
Voltage - Rated DC :
100V
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Resistance :
40mOhm
Rise Time :
30ns
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Packaging :
Tube
Voltage :
100V
Mount :
Through Hole
REACH SVHC :
No SVHC
Package / Case :
TO-220-3
Current Rating :
40A
Datasheets
RFP40N10
Introducing Transistors - FETs, MOSFETs - Single onsemi RFP40N10 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Voltage:100V, Package / Case:TO-220-3, RFP40N10 pinout, RFP40N10 datasheet PDF, RFP40N10 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi RFP40N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi RFP40N10


N-Channel Tube 40mOhm @ 40A, 10V ±20V 300nC @ 20V 100V TO-220-3

RFP40N10 Description


The ON Semiconductor RFP40N10 is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses the feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.



RFP40N10 Features


  • rDS(ON) = 0.040?

  • UIS Rating Curve

  • SOA is Power Dissipation Limited

  • 175℃ Operating Temperature

  • 40A, 100V



RFP40N10 Application


  • Switching regulators

  • Switching converters

  • Motor drivers 

  • Relay drivers


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