RFP12N10L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

12A

Voltage :

100V

Number of Elements :

1

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

10V

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

60W

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current :

12A

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Published :

2005

Resistance :

200mOhm

Factory Lead Time :

9 Weeks

Number of Channels :

1

Voltage - Rated DC :

100V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

100V

Height :

9.4mm

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

60W Tc

Pbfree Code :

yes

Width :

4.83mm

Length :

10.67mm

Current Rating :

12A

Case Connection :

DRAIN

Mount :

Through Hole

Threshold Voltage :

2V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

JESD-609 Code :

e3

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V

Radiation Hardening :

No

Rise Time :

70ns

Fall Time (Typ) :

80 ns

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Turn-Off Delay Time :

100 ns

Number of Terminations :

3

Vgs (Max) :

±10V

Rds On (Max) @ Id, Vgs :

200m Ω @ 12A, 5V

Number of Pins :

3

FET Type :

N-Channel

Element Configuration :

Single

Package / Case :

TO-220-3

Weight :

4.535924g