RFD4N06L

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Number of Terminals :

2

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

10A

Drain Current-Max (Abs) (ID) :

4A

DS Breakdown Voltage-Min :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.6Ohm

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Surface Mount :

yes

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

JESD-609 Code :

e0

Reach Compliance Code :

Compliant

Power Dissipation-Max (Abs) :

30W

Operating Temperature (Max) :

175°C

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Number of Elements :

1

ECCN Code :

EAR99